advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 35v low on-resistance r ds(on) 25m fast switching performance i d 7a p-ch bv dss -35v r ds(on) 40m description i d -6.1a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 35 -35 v v gs gate-source voltage 20 20 v i d @t a =25 continuous drain current 3 7 -6.1 a i d @t a =70 continuous drain current 3 5.7 -5 a i dm pulsed drain current 1 30 -30 a p d @t a =25 total power dissipation 2.0 w linear derating factor 0.016 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a thermal resistance junction-ambient 3 max. 62.5 /w data and specifications subject to change without notice parameter 201122041 thermal data ap4511GM pb free plating product the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the so-8 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1 s1 g1 s2 g2 d1 d1 d2 d2 so-8
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 35 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - 18 25 m v gs =4.5v, i d =5a - 29 37 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =7a - 9 - s i dss drain-source leakage current (t j =25 o c) v ds =35v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =28v, v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - na q g total gate charge 2 i d =7a - 11 18 nc q gs gate-source charge v ds =28v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =18v - 12 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 22 - ns t f fall time r d =18 -6- ns c iss input capacitance v gs =0v - 830 1330 pf c oss output capacitance v ds =25v - 150 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf r g gate resistance f=1.0mhz - 1.2 1.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =7a, v gs =0v - 18 - ns q rr reverse recovery charge di/dt=100a/s - 12 - nc ap4511GM 100
ap4511GM p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -35 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 ,i d =-1ma - -0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-6a - 32 40 m v gs =-4.5v, i d =-4a - 50 60 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-6a - 9 - s i dss drain-source leakage current (t j =25 o c) v ds =-35v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-28v, v gs =0v - - -25 ua i gss gate-source leakage v gs =20v - - na q g total gate charge 2 i d =-6a - 10 16 nc q gs gate-source charge v ds =-28v - 2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =-18v - 10 - ns t r rise time i d =-1a - 6 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 26 - ns t f fall time r d =18 -7- ns c iss input capacitance v gs =0v - 690 1100 pf c oss output capacitance v ds =-25v - 165 - pf c rss reverse transfer capacitance f=1.0mhz - 130 - pf r g gate resistance f=1.0mhz - 5.2 7.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.7a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-6a, v gs =0v - 20 - ns q rr reverse recovery charge di/dt=-100a/s - 12 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad. 100
n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature ap4511GM 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 20 25 30 35 40 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g =10v
ap4511GM n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 14 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =28v 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 10us 1ms 10ms 100ms 1s dc 0 10 20 30 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature ap4511GM 0 10 20 30 40 50 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 30 35 40 45 50 55 60 357911 -v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =-4a t a =25 o c 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 10 20 30 40 50 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-6a v g =-10v 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
ap4511GM p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 14 0 5 10 15 20 25 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-6a v ds = - 28v 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 10 20 30 02468 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v
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